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LITE-ON SEMICONDUCTOR
TC0640H thru TC3500H
Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us www..com High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0
SMC
SMC A DIM. A B C B C D E MIN. 6.60 5.59 2.92 0.15 7.75 0.05 2.01 0.76 MAX. 7.11 6.22 3.18 0.31 8.13 0.20 2.62 1.52
MECHANICAL DATA
Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.093 grams
G H E F D
F G H
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range SYMBOL VALUE UNIT A A
IPP ITSM TJ TSTG
100 50 -40 to +150 -55 to +150
THERMAL RESISTANCE
CHARACTERISTICS Junction to leads Junction to ambient on print circuit (on recommended pad layout) Typical positive temperature coefficient for brekdown voltage SYMBOL VALUE UNIT /W /W %/
Rth(J-L) Rth(J-A) VBR/TJ
20 100 0.1
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE IPP (A) 500 400 250 200 160 100
IPP, PEAK PULSE CURRENT (%)
100
Peak value (Ipp) tr= rise time to peak value tp= Decay time to half value
50
Half value
0 tr tp
TIME
REV. 0, 03-Dec-2001, KSWC02
ELECTRICAL CHARACTERISTICS @ TA= 25 unless otherwise specified TC0640H thru TC3500H
PARAMETER
RATED REPETITIVE OFF-STATE VOLTAGE
OFF-STATE LEAKAGE CURRENT @ VDRM
BREAKOVER VOLTAGE
ON-STATE VOLTAGE @ IT=1.0A
BREAKOVER CURRENT
HOLDING CURRENT
OFF-STATE CAPACITANCE
SYMBOL UNITS
VDRM Volts
IDRM uA
VBO Volts
VT Volts
IBOmA
IBO+ mA
IHmA
IH+ mA
Co pF
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LIMIT
Max
Max
Max
Max
Min
Max
Min
Max
Typ
TC0640H TC0720H TC0900H TC1100H TC1300H TC1500H TC1800H TC2300H TC2600H TC3100H TC3500H
58 65 75 90 120 140 160 190 220 275 320
5 5 5 5 5 5 5 5 5 5 5
77 88 98 130 160 180 220 265 300 350 400
3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5
50 50 50 50 50 50 50 50 50 50 50
800 800 800 800 800 800 800 800 800 800 800
150 150 150 150 150 150 150 150 150 150 150
800 800 800 800 800 800 800 800 800 800 800
200 200 200 120 120 120 120 80 80 80 80
SYMBOL VDRM IDRM VBR IBR VBO IBO IH VT IPP CO
PARAMETER Stand-off Voltage Leakage current at stand-off voltage Breakdown voltage Breakdown current IBR Breakover voltage Breakover current IBO IH IDRM IPP
I
V VT VBR VDRM VBO
Holding current On state voltage Peak pulse current Off state capacitance
Note: 1
Note: 2
REV. 0, 03-Dec-2001, KSWC02
NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state. The Surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias.
RATING AND CHARACTERISTICS CURVES TC0640H thru TC3500H
FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
100 1.20
NORMALIZED BREAKDOWN VOLTAGE
I(DRM), OFF STATE CURRENT (uA)
1.15
10
1.10
VBR (TJ) VBR (TJ=25)
1.0
VDRM=50V
1.05
www..com 0.1
1.0
0.01
0.95
0.001 -25
0
25
50
75
100
125
150
0.90 -50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE ()
TJ, JUNCTION TEMPERATURE ()
FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE
1.10
FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE
100
NORMALIZED BREAKOVER VOLTAGE
1.05
VBO (TJ) VBO (TJ=25)
I(T), ON STATE CURRENT
TJ=25
10
1.0
0.95 -50
-25
0
25
50
75
100
125
150
175
1.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
TJ, JUNCTION TEMPERATURE ()
V (T); ON STATE VOLTAGE
FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT vs JUNCTION TEMPERATURE
1.4 1.3 1
FIG. 6 - RELATIVE VARIATION OF JUNCTION CAPACITANCE vs REVERSE VOLTAGE BIAS
NORMALIZED HOLDING CURRENT
1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 -50 -25 0 25 50 75 100 125
IH (TJ) IH (TJ=25)
NORMALIZE CAPACITANCE
1.2
CO(VR) CO(VR = 1V)
Tj =25 f=1MHz VRMS = 1V
0.1 1 10 100
TJ, JUNCTION TEMPERATURE ()
VR, REVERSE VOLTAGE
REV. 0, 03-Dec-2001, KSWC02
TYPICAL CIRCUIT APPLICATIONS TC0640H thru TC3500H
FUSE RING
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TSPD 1
TELECOM EQUIPMENT E.G. MODEM
TIP
RING
PTC TSPD 1
TELECOM EQUIPMENT E.G. ISDN
TSPD 2 TIP PTC
RING
PTC TSPD 2 TSPD 1 TSPD 3
TELECOM EQUIPMENT E.G. LINE CARD
TIP
PTC
The PTC (Positive Temperature Coefficient) is an overcurrent protection device
REV. 0, 03-Dec-2001, KSWC02

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